04/22/2026
By Lynne Schaufenbil
From Growth to Devices: Enabling High-Performance Ga₂O₃ Power Electronics
Abstract: Power electronics play a critical role in modern electrical infrastructures, from power grids and electric transportation to satellites and space exploration. With the rapid expansion of AI-driven computational data centers, the demand for energy-efficient power management has never been greater. However, significant energy loss as heat in existing power systems necessitates advanced semiconductor technologies for meeting the growing demands of modern power electronics, as conventional Si-based power devices approach their theoretical performance limits. Gallium Oxide (Ga2O3), with its ultra-wide bandgap, stands out as a promising candidate due to its excellent electrical properties and high breakdown field, enabling power devices to operate at extreme temperatures, withstand harsh radiation conditions, and handle high power with reduced size, weight, and enhanced efficiency. Despite its advantages, critical challenges remain in Ga₂O₃ material synthesis, device processing, thermal management, high temperature and radiation tolerance. This talk presents a comprehensive overview of our recent research focused on overcoming these barriers. Key highlights include: high-quality Ga₂O₃ synthesis using chemical vapor deposition, novel plasma-free etching techniques for damage-free device patterning, device development, and evaluation of device resilience under high temperature and radiation exposure. Together, these efforts aim to advance Ga₂O₃ device platforms for next-generation power and aerospace electronics.
Bio: Anhar Bhuiyan is an Assistant Professor in the Department of Electrical and Computer Engineering at the University of Massachusetts Lowell. He earned his Ph.D. from The Ohio State University in 2023, focusing on the development of Ga2O3 semiconductors for high-power electronic applications. His current research at UMass Lowell integrates epitaxial growth, thermal management, radiation effects, and device engineering of (ultra)wide bandgap semiconductors for high power electronics and deep-ultraviolet optoelectronics. Bhuiyan has (co)authored over 100 scientific publications, including journals, refereed conferences, and patents. His research has been supported by the National Science Foundation, Draper, and Air Force Research Laboratory, and he is also a recent recipient of the 2025-Ralph E. Powe Junior Faculty Enhancement Award, sponsored by Oak Ridge Associated Universities.
If you are interested in attending, please contact Lynne_Schaufenbil@uml.edu.