EECE.5050 Microwave Electronics (Formerly 16.505)

Description

Review of p-n junction theory, depletion layer width and junction capacitance, Schottky barrier diodes, pin diodes and applications in switches and phase shifters, varactors and step recovery diodes, tunnel diodes and circuits, Gunn devices and circuits, avalanche diodes, IMPATT, TRAPATT and BARRITT diodes, microwave bipolar junction transistors (BJT) and field effect transistors (FET), small signal amplifier design, new devices like HEMT and Si-Ge devices, traveling wave tubes and klystrons.

Course prerequisites/corequisites are determined by the faculty and approved by the curriculum committees. Students are required to fulfill these requirements prior to enrollment. For courses offered through online or GPS delivery, students are responsible for confirming with the instructor or department that all enrollment requirements have been satisfied before registering.