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EECE.5040 VLSI Fabrication (Formerly 16.504)

Id: 003260 Credits Min: 3 Credits Max: 3

Description

Fabrication of resistors, capacitors, p-n junction and Schottky Barrier diodes, BJT's and MOS devices and Integrated circuits. Topics include: silicon structure, wafer preparation, sequential techniques in micro-electronic processing, testing and packaging, yield and clean room environments. MOS structures, crystal defects, Fick's laws of diffusion; oxidation of silicon, photolithography including photoresist, development and stripping. Metallization for conductors, Ion implantation for depletion mode and CMOS transistors for better yield speed, low power dissipation and reliability. Students will fabricate circuits using the DSIPL Laboratory.

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