Growth Facilities

Gen II MBE

One molecular beam epitaxy system at the Photonics Center is a Veeco GEN II (formally, Applied EPI) system with a 3-inch single wafer capability. The system was donated by Corning Lasertron in 2004 and has been fully operational since 2005 for the growth of wafers for fabricating microelectronic and electro-photonic devices. This system is equipped with arsenic cracker with auto-valve control and the entire group-III cells have been updated into sumo-cells, which can provide a very stable molecular flux through a long period of time. The system is also equipped with in-situ monitoring systems such as RHEED and ellipsometry.

This system is equipped with group V Sb and As effusion cells, group III Ga, Al, In effusion cells along with Be for p-type and GaTe for  n-type doping purposes. RHEED is widely used in this system to monitor the surface oxide desorption off the substrates and to get the desired layer growth rates. The background pressure of this system is ideally maintained at ~ 2x10-9 Torr or better. Mostly, this system is allotted for Sb based compound semiconductor structural growth. Recent structures include GaSb/AlGaSb based quantum well structures, GaSb p-n and p-i-n diodes, GaSb and alloys GaAlAsSb/GaInAsSb based quantum well, diode structures, and InSb based homoepitaxial structures.

RIBER solid source MBE system
 

This recently upgraded and maintained Riber solid source MBE system is equipped with group V Sb and As cracker cells, group III Ga, Al, In effusion cells along with Be for p-type and GaTe for n- type doping purposes. It can accommodate up to nine 2” wafers in the loading chamber and ideally maintained at ~ 1x10-9 Torr or better.This system will be mostly used for Sb based compound semiconductor structural growth.

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