Gen II MBE
Gen II MBE
One molecular beam epitaxy system at the
This system is equipped with group V Sb and As effusion cells, group III Ga, Al, In effusion cells along with Be for p-type and GaTe for n-type doping purposes. RHEED is widely used in this system to monitor the surface oxide desorption off the substrates and to get the desired layer growth rates. The background pressure of this system is ideally maintained at ~ 2x10-9 Torr or better. Mostly, this system is allotted for Sb based compound semiconductor structural growth. Recent structures include GaSb/AlGaSb based quantum well structures, GaSb p-n and p-i-n diodes, GaSb and alloys GaAlAsSb/GaInAsSb based quantum well, diode structures, and InSb based homoepitaxial structures.
RIBER solid source MBE system
This recently upgraded and maintained Riber solid source MBE system is equipped with group V Sb and As cracker cells, group III Ga, Al, In effusion cells along with Be for p-type and GaTe for n- type doping purposes. It can accommodate up to nine 2” wafers in the loading chamber and ideally maintained at ~ 1x10-9 Torr or better.This system will be mostly used for Sb based compound semiconductor structural growth.